2DB1182Q-13 Transistor Datasheet

PNP BJT | DIODES

PNPTO-252General Purpose
VCEO
32V
Ic Max
2A
Pd Max
1.2W
Gain
120
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Quick Reference

The 2DB1182Q-13 is a PNP bipolar transistor in a TO-252 package, designed for general purpose applications. It supports a breakdown voltage of 32V and continuous collector current of 2A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO32VBreakdown voltage
IC Max2ACollector current
Pd Max1.2WPower dissipation
Gain120DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo110MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
B772M PNP TO-251-3L 30V 3A 1.25W
2SB772 PNP TO-252 30V 3A 1W
B772M PNP TO-251-3L 30V 3A 1.25W
View all TO-252 PNP Transistors ›