2N5550TFR-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-92General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-
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Quick Reference

The 2N5550TFR-HXY is a NPN bipolar transistor in a TO-92 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 160V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-92Physical mounting form factor
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency625mWTransition frequency
VCE(sat)200Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp600mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
S9013 NPN SOT-23 25V 500mA 300mW
BC337-25BK NPN TO-92 - 45V 800mA
BC547 NPN TO-92 - 45V -
NTE194-HXY NPN TO-92 - 160V 600mA
View all TO-92 NPN Transistors ›