2N5551TFR Transistor Datasheet

NPN BJT | onsemi

NPNTO-92-3LGeneral Purpose
VCEO
160V
Ic Max
600mA
Pd Max
625mW
Gain
80
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Quick Reference

The 2N5551TFR is a NPN bipolar transistor in a TO-92-3L package, designed for general purpose applications. It supports a breakdown voltage of 160V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92-3LPhysical mounting form factor
VCEO160VBreakdown voltage
IC Max600mACollector current
Pd Max625mWPower dissipation
Gain80DC current gain
Frequency100MHzTransition frequency
VCE(sat)200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
KSC1845FTA NPN TO-92-3L 120V 50mA 500mW
2N5551TA NPN TO-92-3L 160V 600mA 625mW
View all TO-92-3L NPN Transistors ›