2N6052 Transistor Datasheet

PNP BJT | SPTECH

PNPTO-3High Power
VCEO
100V
Ic Max
12A
Pd Max
150W
Gain
18000
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The 2N6052 is a PNP bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 12A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO100VBreakdown voltage
IC Max12ACollector current
Pd Max150WPower dissipation
Gain18000DC current gain
Frequency-Transition frequency
VCE(sat)3VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJ4502 PNP TO-3 90V 30A 200W
2N5684 PNP TO-3 80V 50A 300W
BD318 PNP TO-3 100V 16A 200W
2N5884 PNP TO-3 80V 25A 200W
MJ15016 PNP TO-3 120V 15A 180W
MJ11033 PNP TO-3 120V 50A 300W
View all TO-3 PNP Transistors ›