2SA1952 Transistor Datasheet

PNP BJT | JSCJ

PNPTO-252-2LHigh Power
VCEO
-
Ic Max
60V
Pd Max
5A
Gain
-55℃~+150℃
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Quick Reference

The 2SA1952 is a PNP bipolar transistor in a TO-252-2L package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 60V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-252-2LPhysical mounting form factor
VCEO-Breakdown voltage
IC Max60VCollector current
Pd Max5APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)80MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp1WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SA1225 PNP TO-252-2L - 160V 1.5A
View all TO-252-2L PNP Transistors ›