2SA2013-TD-E Transistor Datasheet

PNP BJT | onsemi

PNPSOT-89High Power
VCEO
50V
Ic Max
4A
Pd Max
3.5W
Gain
-
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Quick Reference

The 2SA2013-TD-E is a PNP bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of 50V and continuous collector current of 4A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO50VBreakdown voltage
IC Max4ACollector current
Pd Max3.5WPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo360MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
FCX591ATA PNP SOT-89 40V 1A 1W
BCX51-16 PNP SOT-89 45V 1A 1W
2STF2360 PNP SOT-89 60V 3A 1.4W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
DSS5540X-13 PNP SOT-89 40V 4A 900mW
View all SOT-89 PNP Transistors ›