2SA2169-TL-E Transistor Datasheet

PNP BJT | onsemi

PNPTO-252-3General Purpose
VCEO
50V
Ic Max
10A
Pd Max
950mW
Gain
700
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Quick Reference

The 2SA2169-TL-E is a PNP bipolar transistor in a TO-252-3 package, designed for general purpose applications. It supports a breakdown voltage of 50V and continuous collector current of 10A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252-3Physical mounting form factor
VCEO50VBreakdown voltage
IC Max10ACollector current
Pd Max950mWPower dissipation
Gain700DC current gain
Frequency200MHzTransition frequency
VCE(sat)580mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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