2SB1201S-TL-E Transistor Datasheet

PNP BJT | onsemi

PNPTO-252General Purpose
VCEO
-
Ic Max
50V
Pd Max
2A
Gain
-55℃~+150℃
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Quick Reference

The 2SB1201S-TL-E is a PNP bipolar transistor in a TO-252 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max2APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo150MHzEmitter-Base voltage
Temp800mWOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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