2SC5569-TD-E Transistor Datasheet

NPN BJT | onsemi

NPNSOT-89High Power
VCEO
-
Ic Max
50V
Pd Max
7A
Gain
-55℃~+150℃
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Quick Reference

The 2SC5569-TD-E is a NPN bipolar transistor in a SOT-89 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 50V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting form factor
VCEO-Breakdown voltage
IC Max50VCollector current
Pd Max7APower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo330MHzEmitter-Base voltage
Temp3.5WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BFU590Q NPN SOT-89 - 15V 200mA
LBTN180Y3T1G NPN SOT-89 - 80V 1A
2SD1664 NPN SOT-89-3L 32V 1A 500mW
2SC4672 NPN SOT-89 - 50V 2A
2SC2383 NPN SOT-89 160V 1A 500mW
PXT3904-HXY NPN SOT-89 - 50V -
CXT3019TR-HXY NPN SOT-89 - 80V -
BSR43TA-HXY NPN SOT-89 - 80V -
2SD882 NPN TO-126 30V 3A 12.5W
2SD882SQ NPN SOT-89 - 30V 3A
View all SOT-89 NPN Transistors ›