2SC5876T106Q Transistor Datasheet

NPN BJT | ROHM

NPNSOT-323-3General Purpose
VCEO
60V
Ic Max
500mA
Pd Max
200mW
Gain
-

Quick Reference

The 2SC5876T106Q is a NPN bipolar transistor in a SOT-323-3 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323-3Physical mounting form factor
VCEO60VBreakdown voltage
IC Max500mACollector current
Pd Max200mWPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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