BC846BDW1T1G-FS Transistor Datasheet

- BJT | FUXINSEMI

-SOT-363General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
200
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Quick Reference

The BC846BDW1T1G-FS is a - bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 65V and continuous collector current of 100mA. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain200DC current gain
Frequency100MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
UMZ1N - SOT-363 50V 150mA 150mW
View all SOT-363 - Transistors ›