BC846BQBZ Transistor Datasheet

- BJT | Nexperia

-DFN-3(1x1.1)General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
420mW
Gain
450
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Quick Reference

The BC846BQBZ is a - bipolar transistor in a DFN-3(1x1.1) package, designed for general purpose applications. It supports a breakdown voltage of 65V and continuous collector current of 100mA. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDFN-3(1x1.1)Physical mounting form factor
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max420mWPower dissipation
Gain450DC current gain
Frequency100MHzTransition frequency
VCE(sat)400mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BC846BQB-QZ - DFN-3(1x1.1) 65V 100mA 420mW
View all DFN-3(1x1.1) - Transistors ›