BC850BWE6327-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-323General Purpose
VCEO
-
Ic Max
45V
Pd Max
100mA
Gain
-55℃~+150℃
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Quick Reference

The BC850BWE6327-HXY is a NPN bipolar transistor in a SOT-323 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 45V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting form factor
VCEO-Breakdown voltage
IC Max45VCollector current
Pd Max100mAPower dissipation
Gain-55℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)100MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp150mWOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BC847W NPN SOT-323 - 45V 100mA
2SC4226 R25 NPN SOT-323 - 12V 100mA
MMST3904-TP NPN SOT-323 - 40V 200mA
2SC4226 R25-MS NPN SOT-323 - 12V 100mA
BC848BWT106 NPN SOT-323 - 30V 100mA
2SC4117-GR.LF NPN SOT-323 - 120V 100mA
2SD2351T106W NPN SOT-323 - 50V 150mA
BC847CW NPN SOT-323 45V 100mA 200mW
View all SOT-323 NPN Transistors ›