BCP5510TA Transistor Datasheet

NPN BJT | DIODES

NPNSOT-223General Purpose
VCEO
-
Ic Max
60V
Pd Max
1A
Gain
-65℃~+150℃
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Quick Reference

The BCP5510TA is a NPN bipolar transistor in a SOT-223 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 60V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting form factor
VCEO-Breakdown voltage
IC Max60VCollector current
Pd Max1APower dissipation
Gain-65℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)150MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp2WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BCP5616QTC NPN SOT-223 - 80V 1A
BCP55-16 NPN SOT-223 60V 1A 1.5W
BCP56 NPN SOT-223 80V 1A 1.5W
FZT657QTA NPN SOT-223 - 300V 500mA
BCP56-10T1G NPN SOT-223 - 80V 1A
CZT5551 NPN SOT-223 160V 600mA 1W
BCP56-10HX NPN SOT-223 - 80V 1A
SZT560A NPN SOT-223 - 60V 3A
LBSS4350SZ4TZHG NPN SOT-223 - 50V 3A
View all SOT-223 NPN Transistors ›