BCW66H Transistor Datasheet

NPN BJT | LGE

NPNSOT-23General Purpose
VCEO
75V
Ic Max
800mA
Pd Max
330mW
Gain
630
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Quick Reference

The BCW66H is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 75V and continuous collector current of 800mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO75VBreakdown voltage
IC Max800mACollector current
Pd Max330mWPower dissipation
Gain630DC current gain
Frequency170MHzTransition frequency
VCE(sat)700mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
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FMMT493ATA NPN SOT-23 60V 1A 500mW
BC846AQ-7-F NPN SOT-23 65V 100mA 310mW
FMMT491TA NPN SOT-23 60V 1A 500mW
MMBTA06-7-F NPN SOT-23 80V 500mA 350mW
MMBTA05LT1G NPN SOT-23 60V 500mA 300mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
BC846ALT1G NPN SOT-23 65V 100mA 225mW
BC846A-7-F NPN SOT-23 65V 100mA 350mW
View all SOT-23 NPN Transistors ›