BD137G-HYX Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
60V
Ic Max
1.5A
Pd Max
1W
Gain
25
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Quick Reference

The BD137G-HYX is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 1.5A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO60VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain25DC current gain
Frequency50MHzTransition frequency
VCE(sat)500mV@1.5A,0.15ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
BD13516STU-HXY NPN TO-126 45V 1.5A 1W
BD235 NPN TO-126 60V 2A 1W
BD136 NPN TO-126 45V 1.5A 1W
BD437 NPN TO-126 45V 4A 36W
KSD1691YSTU NPN TO-126 60V 5A 1.3W
BD135-16 NPN TO-126 45V 1.5A 1.25W
BD13716STU-HXY NPN TO-126 60V 1.5A 1W
BD437 NPN TO-126 45V 4A 36W
View all TO-126 NPN Transistors ›