BD236STU-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
60V
Ic Max
2A
Pd Max
1W
Gain
-
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Quick Reference

The BD236STU-HXY is a PNP bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 2A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max1WPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
KTA1715-Y-U/PH PNP TO-126 50V 2A 10W
KTB1151-Y-U/PH PNP TO-126 60V 5A 20W
View all TO-126 PNP Transistors ›