D882SSG-P-AE3-R Transistor Datasheet

NPN BJT | UTC

NPNSOT-23High Power
VCEO
30V
Ic Max
3A
Pd Max
10W
Gain
160
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Quick Reference

The D882SSG-P-AE3-R is a NPN bipolar transistor in a SOT-23 package, designed for high power applications. It supports a breakdown voltage of 30V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO30VBreakdown voltage
IC Max3ACollector current
Pd Max10WPower dissipation
Gain160DC current gain
Frequency80MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBT5089 NPN SOT-23 25V 100mA 200mW
SS8050 NPN SOT-23 25V 1.5A 300mW
S9013 NPN SOT-23 25V 500mA 300mW
S9014 NPN SOT-23 45V 100mA 200mW
SS8050 NPN SOT-23 25V 1.5A 300mW
S8050 NPN SOT-23 25V 500mA 300mW
BC818-40LT1G NPN SOT-23 25V 500mA 225mW
MMSS8050-H-TP NPN SOT-23 25V 1.5A 300mW
MMS9013-H-TP NPN SOT-23 25V 500mA 300mW
View all SOT-23 NPN Transistors ›