DNBT8105-7-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-23General Purpose
VCEO
60V
Ic Max
1A
Pd Max
250mW
Gain
300
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Quick Reference

The DNBT8105-7-HXY is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of 60V and continuous collector current of 1A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO60VBreakdown voltage
IC Max1ACollector current
Pd Max250mWPower dissipation
Gain300DC current gain
Frequency150MHzTransition frequency
VCE(sat)500mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
S9014 NPN SOT-23 45V 100mA 200mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
BC817-40Q-7-F NPN SOT-23 45V 500mA 310mW
BC846AQ-7-F NPN SOT-23 65V 100mA 310mW
BC847B-7-F NPN SOT-23 45V 100mA 300mW
View all SOT-23 NPN Transistors ›