DXT2010P5-13 Transistor Datasheet

NPN BJT | DIODES

NPNPowerDI-5High Power
VCEO
60V
Ic Max
6A
Pd Max
3.2W
Gain
55
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Quick Reference

The DXT2010P5-13 is a NPN bipolar transistor in a PowerDI-5 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 6A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI-5Physical mounting form factor
VCEO60VBreakdown voltage
IC Max6ACollector current
Pd Max3.2WPower dissipation
Gain55DC current gain
Frequency130MHzTransition frequency
VCE(sat)210mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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