DXT2011P5-13 Transistor Datasheet

NPN BJT | DIODES

NPNPowerDI-5High Power
VCEO
100V
Ic Max
6A
Pd Max
3.2W
Gain
30
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Quick Reference

The DXT2011P5-13 is a NPN bipolar transistor in a PowerDI-5 package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 6A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI-5Physical mounting form factor
VCEO100VBreakdown voltage
IC Max6ACollector current
Pd Max3.2WPower dissipation
Gain30DC current gain
Frequency130MHzTransition frequency
VCE(sat)125mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
DXTN07100BP5-13 NPN PowerDI-5 100V 2A 3.2W
View all PowerDI-5 NPN Transistors ›