FJP13007H1TU-F080-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-220High Power
VCEO
400V
Ic Max
8A
Pd Max
80W
Gain
-
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Quick Reference

The FJP13007H1TU-F080-HXY is a NPN bipolar transistor in a TO-220 package, designed for high power applications. It supports a breakdown voltage of 400V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-220Physical mounting form factor
VCEO400VBreakdown voltage
IC Max8ACollector current
Pd Max80WPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo4MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE15034G NPN TO-220 350V 4A 50W
MJE13007G NPN TO-220 400V 8A 80W
MJE13009-2 NPN TO-220 400V 12A 100W
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 80W
TIP50 NPN TO-220C 400V 1A 40W
13007B NPN TO-220 400V 5A 2W
BUL38D NPN TO-220 450V 5A 80W
WGD13005 NPN TO-220 400V 4A 70W
MJE13006-HXY NPN TO-220 400V 8A 80W
NTE2312-HXY NPN TO-220 400V 8A 80W
View all TO-220 NPN Transistors ›