G1-MMBT5551 Transistor Datasheet

NPN BJT | GOODWORK

NPNSOT-23General Purpose
VCEO
-
Ic Max
160V
Pd Max
600mA
Gain
-55℃~+150℃
📄 View PDF Datasheet🛒 Buy from LCSC

Quick Reference

The G1-MMBT5551 is a NPN bipolar transistor in a SOT-23 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 160V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageSOT-23Physical mounting form factor
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max600mAPower dissipation
Gain-55℃~+150℃DC current gain
Frequency300Transition frequency
VCE(sat)300MHzSaturation voltage
Vebo50nAEmitter-Base voltage
Temp300mWOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
KRC105S-RTK/P NPN SOT-23 - 100mA 200mW
FMMT495 NPN SOT-23 - 150V 1A
MMBT2222A NPN SOT-23 20V 350mA 300mW
ZXTN4240F-7 NPN SOT-23 - 40V 2A
FMMT619-JSM NPN SOT-23 - 50V 2A
MMBT5551 NPN SOT-23 160V 600mA 250mW
SMMBTA06LT3G NPN SOT-23 - 80V 500mA
NSVMMBTA05LT1G NPN SOT-23 - 60V 500mA
S9018 NPN SOT-23 18V 50mA 200mW
SS8050 NPN SOT-23 25V 1.5A 300mW
View all SOT-23 NPN Transistors ›