HMMDT55517F Transistor Datasheet

NPN BJT | HXY MOSFET

NPNSOT-363General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-
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Quick Reference

The HMMDT55517F is a NPN bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of - and continuous collector current of 160V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency200mWTransition frequency
VCE(sat)100Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp200mAOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MMDT3904 NPN SOT-363 40V 200mA 200mW
MMDT3904 NPN SOT-363 40V 200mA 200mW
View all SOT-363 NPN Transistors ›