KSB772YS-HXY Transistor Datasheet

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
30V
Ic Max
3A
Pd Max
1W
Gain
-

Quick Reference

The KSB772YS-HXY is a PNP bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 30V and continuous collector current of 3A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO30VBreakdown voltage
IC Max3ACollector current
Pd Max1WPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-126 PNP Transistors โ€บ