KSE350G-JSM Transistor Datasheet

NPN BJT | JSMSEMI

NPNTO-126FHigh Power
VCEO
300V
Ic Max
500mA
Pd Max
20W
Gain
240
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Quick Reference

The KSE350G-JSM is a NPN bipolar transistor in a TO-126F package, designed for high power applications. It supports a breakdown voltage of 300V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-126FPhysical mounting form factor
VCEO300VBreakdown voltage
IC Max500mACollector current
Pd Max20WPower dissipation
Gain240DC current gain
Frequency-Transition frequency
VCE(sat)1VSaturation voltage
Vebo3VEmitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-126F NPN Transistors ›