KTD882-Y-U/PH-HXY Transistor Datasheet

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
30V
Ic Max
3A
Pd Max
1.25W
Gain
300@1A,2V
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Quick Reference

The KTD882-Y-U/PH-HXY is a NPN bipolar transistor in a TO-126 package, designed for general purpose applications. It supports a breakdown voltage of 30V and continuous collector current of 3A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting form factor
VCEO30VBreakdown voltage
IC Max3ACollector current
Pd Max1.25WPower dissipation
Gain300@1A,2VDC current gain
Frequency5MHzTransition frequency
VCE(sat)500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SD882 NPN TO-126 30V 3A 12.5W
D882(RANGE:160-320) NPN TO-126 30V 3A 1.25W
2SD882 NPN TO-126 30V 3A 12.5W
2SD882L-P-T60-K NPN TO-126 30V 3A 1W
KSD882YSTU-HXY NPN TO-126 30V 3A 1.25W
View all TO-126 NPN Transistors ›