LBC856BWT1G Transistor Datasheet

PNP BJT | LRC

PNPSC-70General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
150mW
Gain
220
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Quick Reference

The LBC856BWT1G is a PNP bipolar transistor in a SC-70 package, designed for general purpose applications. It supports a breakdown voltage of 65V and continuous collector current of 100mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLRCOriginal Manufacturer
PackageSC-70Physical mounting form factor
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max150mWPower dissipation
Gain220DC current gain
Frequency100MHzTransition frequency
VCE(sat)650mVSaturation voltage
Vebo-Emitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
L2SA1576AQT1G PNP SC-70 50V 150mA 150mW
View all SC-70 PNP Transistors ›