MJ11029 Transistor Datasheet

PNP BJT | SPTECH

PNPTO-3High Power
VCEO
60V
Ic Max
50A
Pd Max
300W
Gain
18000

Quick Reference

The MJ11029 is a PNP bipolar transistor in a TO-3 package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 50A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting form factor
VCEO60VBreakdown voltage
IC Max50ACollector current
Pd Max300WPower dissipation
Gain18000DC current gain
Frequency-Transition frequency
VCE(sat)3.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+200โ„ƒOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJ11028 PNP TO-3 60V 50A 300W
View all TO-3 PNP Transistors โ€บ