MJB41CT4G Transistor Datasheet

NPN BJT | onsemi

NPND2PAKHigh Power
VCEO
100V
Ic Max
6A
Pd Max
65W
Gain
30
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Quick Reference

The MJB41CT4G is a NPN bipolar transistor in a D2PAK package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 6A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageD2PAKPhysical mounting form factor
VCEO100VBreakdown voltage
IC Max6ACollector current
Pd Max65WPower dissipation
Gain30DC current gain
Frequency3MHzTransition frequency
VCE(sat)1.5VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJB41CG NPN D2PAK 100V 6A 65W
View all D2PAK NPN Transistors ›