MJB45H11T4G Transistor Datasheet

PNP BJT | onsemi

PNPD2PAKHigh Power
VCEO
80V
Ic Max
10A
Pd Max
50W
Gain
60
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Quick Reference

The MJB45H11T4G is a PNP bipolar transistor in a D2PAK package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 10A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageD2PAKPhysical mounting form factor
VCEO80VBreakdown voltage
IC Max10ACollector current
Pd Max50WPower dissipation
Gain60DC current gain
Frequency40MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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