MJD122T4G-CN Transistor Datasheet

- BJT | ChipNobo

-TO-252General Purpose
VCEO
100V
Ic Max
4A
Pd Max
1.25W
Gain
1000
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Quick Reference

The MJD122T4G-CN is a - bipolar transistor in a TO-252 package, designed for general purpose applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in - switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerChipNoboOriginal Manufacturer
PackageTO-252Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max1.25WPower dissipation
Gain1000DC current gain
Frequency-Transition frequency
VCE(sat)2V@3A,12mASaturation voltage
Vebo-Emitter-Base voltage
Temp-Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD122 NPN TO-252-2L 100V 8A 1.5W
MJD122 NPN TO-252-2L 100V 8A 1.5W
View all TO-252 - Transistors ›