MJD128T4G Transistor Datasheet

PNP BJT | onsemi

PNPDPAKHigh Power
VCEO
-
Ic Max
120V
Pd Max
8A
Gain
-65℃~+150℃@(Tj)
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Quick Reference

The MJD128T4G is a PNP bipolar transistor in a DPAK package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 120V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting form factor
VCEO-Breakdown voltage
IC Max120VCollector current
Pd Max8APower dissipation
Gain-65℃~+150℃@(Tj)DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo4MHzEmitter-Base voltage
Temp1.75WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
NJVMJD45H11T4G PNP DPAK - 80V 8A
MJD2955G PNP DPAK - 60V 10A
MJD42CRLG PNP TO-252 100V 6A 1.75W
MJD42CG PNP DPAK - 100V 6A
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