MJD253T4G Transistor Datasheet

PNP BJT | onsemi

PNPTO-252-2(DPAK)High Power
VCEO
100V
Ic Max
4A
Pd Max
12.5W
Gain
180
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Quick Reference

The MJD253T4G is a PNP bipolar transistor in a TO-252-2(DPAK) package, designed for high power applications. It supports a breakdown voltage of 100V and continuous collector current of 4A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252-2(DPAK)Physical mounting form factor
VCEO100VBreakdown voltage
IC Max4ACollector current
Pd Max12.5WPower dissipation
Gain180DC current gain
Frequency40MHzTransition frequency
VCE(sat)600mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJD127T4 PNP TO-252-2(DPAK) 100V 8A 20W
View all TO-252-2(DPAK) PNP Transistors ›