MJD2955T4G Transistor Datasheet

PNP BJT | onsemi

PNPTO-252(DPAK)High Power
VCEO
60V
Ic Max
10A
Pd Max
20W
Gain
20
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Quick Reference

The MJD2955T4G is a PNP bipolar transistor in a TO-252(DPAK) package, designed for high power applications. It supports a breakdown voltage of 60V and continuous collector current of 10A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting form factor
VCEO60VBreakdown voltage
IC Max10ACollector current
Pd Max20WPower dissipation
Gain20DC current gain
Frequency2MHzTransition frequency
VCE(sat)1.1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2DB1184Q-13 PNP TO-252(DPAK) 50V 3A 1.2W
2SAR573D3TL1 PNP TO-252(DPAK) 50V 3A 10W
View all TO-252(DPAK) PNP Transistors ›