MJD44H11-1G Transistor Datasheet

NPN BJT | onsemi

NPNTO-251(IPAK)High Power
VCEO
80V
Ic Max
8A
Pd Max
20W
Gain
60
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Quick Reference

The MJD44H11-1G is a NPN bipolar transistor in a TO-251(IPAK) package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-251(IPAK)Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max20WPower dissipation
Gain60DC current gain
Frequency85MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-251(IPAK) NPN Transistors ›