MJD45H11-1G Transistor Datasheet

PNP BJT | onsemi

PNPTO-251(IPAK)General Purpose
VCEO
80V
Ic Max
8A
Pd Max
1.75W
Gain
40
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Quick Reference

The MJD45H11-1G is a PNP bipolar transistor in a TO-251(IPAK) package, designed for general purpose applications. It supports a breakdown voltage of 80V and continuous collector current of 8A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-251(IPAK)Physical mounting form factor
VCEO80VBreakdown voltage
IC Max8ACollector current
Pd Max1.75WPower dissipation
Gain40DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo90MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-251(IPAK) PNP Transistors ›