MJD50T4G Transistor Datasheet

NPN BJT | onsemi

NPNTO-252-2(DPAK)High Power
VCEO
400V
Ic Max
1A
Pd Max
15W
Gain
30
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Quick Reference

The MJD50T4G is a NPN bipolar transistor in a TO-252-2(DPAK) package, designed for high power applications. It supports a breakdown voltage of 400V and continuous collector current of 1A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252-2(DPAK)Physical mounting form factor
VCEO400VBreakdown voltage
IC Max1ACollector current
Pd Max15WPower dissipation
Gain30DC current gain
Frequency10MHzTransition frequency
VCE(sat)1VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
3DD13003(RANGE:20-25) NPN TO-252-2(DPAK) 400V 1.5A 1.25W
View all TO-252-2(DPAK) NPN Transistors ›