MJE170G Transistor Datasheet

PNP BJT | onsemi

PNPTO-225-3High Power
VCEO
-
Ic Max
40V
Pd Max
3A
Gain
-65℃~+150℃
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Quick Reference

The MJE170G is a PNP bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 40V. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO-Breakdown voltage
IC Max40VCollector current
Pd Max3APower dissipation
Gain-65℃~+150℃DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp12.5WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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