MJE172G Transistor Datasheet

PNP BJT | onsemi

PNPTO-225-3High Power
VCEO
80V
Ic Max
3A
Pd Max
12.5W
Gain
50
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Quick Reference

The MJE172G is a PNP bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of 80V and continuous collector current of 3A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO80VBreakdown voltage
IC Max3ACollector current
Pd Max12.5WPower dissipation
Gain50DC current gain
Frequency50MHzTransition frequency
VCE(sat)1.7VSaturation voltage
Vebo7VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MJE253G PNP TO-225-3 100V 4A 15W
BD180G PNP TO-225-3 80V 1A 30W
View all TO-225-3 PNP Transistors ›