MJE340G Transistor Datasheet

NPN BJT | onsemi

NPNTO-225-3High Power
VCEO
300V
Ic Max
500mA
Pd Max
20W
Gain
30
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Quick Reference

The MJE340G is a NPN bipolar transistor in a TO-225-3 package, designed for high power applications. It supports a breakdown voltage of 300V and continuous collector current of 500mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-225-3Physical mounting form factor
VCEO300VBreakdown voltage
IC Max500mACollector current
Pd Max20WPower dissipation
Gain30DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo3VEmitter-Base voltage
Temp-65℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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