MJF3055G Transistor Datasheet

NPN BJT | onsemi

NPNTO-220FPHigh Power
VCEO
90V
Ic Max
10A
Pd Max
30W
Gain
100
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Quick Reference

The MJF3055G is a NPN bipolar transistor in a TO-220FP package, designed for high power applications. It supports a breakdown voltage of 90V and continuous collector current of 10A. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220FPPhysical mounting form factor
VCEO90VBreakdown voltage
IC Max10ACollector current
Pd Max30WPower dissipation
Gain100DC current gain
Frequency2MHzTransition frequency
VCE(sat)2VSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-220FP NPN Transistors ›