MJH11019G Transistor Datasheet

PNP BJT | onsemi

PNPTO-247-3High Power
VCEO
200V
Ic Max
15A
Pd Max
150W
Gain
400@5V,10A
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Quick Reference

The MJH11019G is a PNP bipolar transistor in a TO-247-3 package, designed for high power applications. It supports a breakdown voltage of 200V and continuous collector current of 15A. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-247-3Physical mounting form factor
VCEO200VBreakdown voltage
IC Max15ACollector current
Pd Max150WPower dissipation
Gain400@5V,10ADC current gain
Frequency3MHzTransition frequency
VCE(sat)4V@15A,150mASaturation voltage
Vebo-Emitter-Base voltage
Temp-65℃~+150℃@(Tj)Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
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