MJH11022G Transistor Datasheet

NPN BJT | onsemi

NPNTO-247-3High Power
VCEO
-
Ic Max
250V
Pd Max
15A
Gain
-65℃~+150℃@(Tj)
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Quick Reference

The MJH11022G is a NPN bipolar transistor in a TO-247-3 package, designed for high power applications. It supports a breakdown voltage of - and continuous collector current of 250V. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-247-3Physical mounting form factor
VCEO-Breakdown voltage
IC Max250VCollector current
Pd Max15APower dissipation
Gain-65℃~+150℃@(Tj)DC current gain
Frequency400Transition frequency
VCE(sat)3MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp150WOperating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
No compatible alternatives found.
View all TO-247-3 NPN Transistors ›