MMBT2222AWT1G Transistor Datasheet

NPN BJT | onsemi

NPNSC-70(SOT-323)General Purpose
VCEO
40V
Ic Max
600mA
Pd Max
150mW
Gain
35
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Quick Reference

The MMBT2222AWT1G is a NPN bipolar transistor in a SC-70(SOT-323) package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 600mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting form factor
VCEO40VBreakdown voltage
IC Max600mACollector current
Pd Max150mWPower dissipation
Gain35DC current gain
Frequency300MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SC4081T106R NPN SC-70(SOT-323) 50V 150mA 200mW
2SCR523UBTL NPN SC-70(SOT-323) 50V 100mA 200mW
MMBT4401WT1G NPN SC-70(SOT-323) 40V 600mA 150mW
MMBT3904WT1G NPN SC-70(SOT-323) 40V 200mA 150mW
2SC4081U3HZGT106Q NPN SC-70(SOT-323) 50V 150mA 200mW
2SC4081UBTLR NPN SC-70(SOT-323) 50V 150mA 200mW
SMMBT3904WT1G NPN SC-70(SOT-323) 40V 200mA 150mW
LMBT3904WT1G NPN SC-70(SOT-323) 40V 200mA 150mW
2SC4097T106R NPN SC-70(SOT-323) 32V 500mA 200mW
View all SC-70(SOT-323) NPN Transistors ›