MMBT3904DFN Transistor Datasheet

NPN BJT | MSKSEMI

NPNDFN1006-3General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
300mW
Gain
300
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Quick Reference

The MMBT3904DFN is a NPN bipolar transistor in a DFN1006-3 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN1006-3Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain300DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
DN0150ALP4-7B NPN DFN1006-3 50V 100mA 1W
View all DFN1006-3 NPN Transistors ›