MMBT3904LP Transistor Datasheet

NPN BJT | YONGYUTAI

NPNDFN1006-3LGeneral Purpose
VCEO
40V
Ic Max
200mA
Pd Max
300mW
Gain
-
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Quick Reference

The MMBT3904LP is a NPN bipolar transistor in a DFN1006-3L package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in NPN switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYONGYUTAIOriginal Manufacturer
PackageDFN1006-3LPhysical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain-DC current gain
Frequency-Transition frequency
VCE(sat)-Saturation voltage
Vebo300MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
PMBT3904MB-TP NPN DFN1006-3L 50V 100mA 100mW
View all DFN1006-3L NPN Transistors ›