MMBT3906TT1G Transistor Datasheet

PNP BJT | onsemi

PNPSOT-416General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
300mW
Gain
60
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Quick Reference

The MMBT3906TT1G is a PNP bipolar transistor in a SOT-416 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-416Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain60DC current gain
Frequency250MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SA1774TLR PNP SOT-416 50V 150mA 150mW
2SAR523EBTL PNP SOT-416 50V 100mA 150mW
View all SOT-416 PNP Transistors ›