MMBT3906WH Transistor Datasheet

PNP BJT | Jingdao Microelectronics

PNPSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
300
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Quick Reference

The MMBT3906WH is a PNP bipolar transistor in a SOT-363 package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJingdao MicroelectronicsOriginal Manufacturer
PackageSOT-363Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition frequency
VCE(sat)300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
MBT3906DW1T1G-HXY PNP SOT-363 40V 200mA 200mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
BCM857BS PNP SOT-363 45V 200mA 300mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
MMDT3906DW PNP SOT-363 40V 200mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
BCM857BS PNP SOT-363 45V 200mA 300mW
BC857BS PNP SOT-363 45V 200mA 300mW
MMDT2227 PNP SOT-363 40V 600mA 200mW
View all SOT-363 PNP Transistors ›