MMBT3906WT1G Transistor Datasheet

PNP BJT | onsemi

PNPSC-70(SOT-323)General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
150mW
Gain
60
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Quick Reference

The MMBT3906WT1G is a PNP bipolar transistor in a SC-70(SOT-323) package, designed for general purpose applications. It supports a breakdown voltage of 40V and continuous collector current of 200mA. This component is widely used in PNP switching and linear amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting form factor
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max150mWPower dissipation
Gain60DC current gain
Frequency250MHzTransition frequency
VCE(sat)250mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temperature range

Direct Replacements & Alternatives

Part NumberTypePackageVCEOIcPd
2SA1577T106R PNP SC-70(SOT-323) 32V 500mA 200mW
2SA1576AT106R PNP SC-70(SOT-323) 50V 150mA 200mW
2SA1577T106Q PNP SC-70(SOT-323) 32V 500mA 200mW
BC858BWT1G PNP SC-70(SOT-323) 30V 100mA 150mW
BC858AWT1G PNP SC-70(SOT-323) 30V 100mA 150mW
2SA1576AT106S PNP SC-70(SOT-323) 50V 150mA 200mW
2SA1576AT106Q PNP SC-70(SOT-323) 50V 150mA 200mW
2SAR502U3T106 PNP SC-70(SOT-323) 30V 500mA 200mW
View all SC-70(SOT-323) PNP Transistors ›